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 BC856- BC860 PNP Epitaxial Silicon Transistor
August 2006
BC856- BC860
PNP Epitaxial Silicon Transistor Features
* Switching and Amplifier Applications * Suitable for automatic insertion in thick and thin-film circuits * Low Noise: BC859, BC860 * Complement to BC846 ... BC850
2 1 3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
VCBO Collector-Base Voltage
Ta = 25C unless otherwise noted
Parameter
: BC856 : BC857/860 : BC858/859
Value
-80 -50 -30 -65 -45 -30 -5 -100 310 150 -65 ~ 150
Units
V V V V V V V mA mW C C
VCEO
Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859
VEBO IC PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25C unless otherwise noted
Symbol
ICBO hFE VCE (sat) VBE (sat) VBE (on) fT Cob NF
Parameter
Collector Cut-off Current DC Current Gain
Test Condition
VCB= -30V, IE=0 VCE= -5V, IC= -2mA
Min.
110
Typ.
Max.
-15 800
Units
nA
Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -10V, IE=0, f=1MHz VCE= -5V, IC= -200A RG=2K, f=1KHz VCE= -5V, IC= -200A RG=2K, f=30~15000Hz -600
-90 -250 -700 -900 -660 150
-300 -650
mV mV mV mV
-750 -800
mV mV MHz
6 2 1 1.2 1.2 10 4 4 2
pF dB dB dB dB
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC856- BC860 Rev. B
BC856- BC860 PNP Epitaxial Silicon Transistor
hFE Classification
Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800
Ordering Information
Device(note1)
BC856AMTF BC856BMTF BC856CMTF BC857AMTF BC857BMTF BC857CMTF BC858AMTF BC858BMTF BC858CMTF BC859AMTF BC859BMTF BC859CMTF BC860AMTF BC860BMTF BC860CMTF
Note1 :
Device Marking
9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC 9DA 9DB 9DC 9EA 9EB 9EC
Package
SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
Packing Method
Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel
Qty(pcs)
3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000 3000
Pin Difinitions
1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector 1.Base 2.Emitter 3.Collector
Affix "-A,-B,-C" means hFE classification. Affix "-M" means the matte type package. Affix "-TF" means the tape & reel type packing.
2 BC856- BC860 Rev. B
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-50
1000
-45
IC[mA], COLLECTOR CURRENT
-40 -35 -30 -25 -20 -15 -10 -5 -0 -0 -2 -4 -6 -8
IB = - 400A IB = - 350A IB = - 250A IB = - 200A IB = - 150A IB = - 100A IB = - 50A
VCE = - 5V
hFE, DC CURRENT GAIN
IB = - 300A
100
-10
-12
-14
-16
-18
-20
10 -0.1
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
-100
IC = 10 IB
-1
VBE(sat)
IC[mA], COLLECTOR CURRENT
VCE = - 5V
-10
-0.1
-1
VCE(sat)
-0.01 -0.1
-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz IE=0
f=1MHz IE=0
Cob[pF], CAPACITANCE
10
100
1 -1 -10 -100
10 -1 -10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3 BC856- BC860 Rev. B
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
4 BC856- BC860 Rev. B
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM
FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM
SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM
UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
5 BC856- BC860 Rev. B
www.fairchildsemi.com


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